Benchmarking monolayer MoS2 and WS2 field-effect transistors
نویسندگان
چکیده
منابع مشابه
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors
Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is...
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Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS(2)) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness, monolayer MoS(2) can be used for the fabrication of transistors exhibiting extremely high on/off ra...
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S. Fathipour, M. Remskar, A. Varlec, A. Ajoy, R. Yan, S. Vishwanath, S. Rouvimov, W. S. Hwang, H. G. Xing, D. Jena, and A. Seabaugh Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Solid State Physics Department, Jo!zef Stefan Institute, Ljubljana, Slovenia Department of Electrical Engineering, Cornell University, Ithaca, New York 14850, USA Departm...
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The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
متن کاملEnergetic mapping of oxide traps in MoS2 field-effect transistors
The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions of time constants. These defects degrade the mobility and additionally lead to the hysteresis of the gate transfer characteristics, which presents a crucial performance and reliability issue for these new technologies. Here we perform a detailed study of the hysteresis in dou...
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ژورنال
عنوان ژورنال: Nature Communications
سال: 2021
ISSN: 2041-1723
DOI: 10.1038/s41467-020-20732-w